The challenge lay in the uptake of wide bandgap semiconductors (such as SiC, GaN, and in future Ga2O3) to bring about significant efficiency improvements in power electronics for a variety of applications. Achieving the necessary performance and manufacturing yield posed a hurdle that demanded the development of new metrology techniques for defect inspection and characterisation.
To address this need, the National Physical Laboratory (NPL) spearheaded the European Metrology Project "PowerElec." Under this project, novel instruments and methodologies were developed specifically for multiscale defect metrology, ranging from the nanoscale to wafer-scale, tailored for wide bandgap semiconductors. The focus was on advancing sampling strategies and employing near-field spectroscopies, resulting in the creation of new capabilities to identify killer defects in the semiconductor manufacturing process.
The project's outcomes have had a profound impact by introducing enhanced capabilities using advanced sampling strategies and near-field spectroscopies. The newly developed methods have resulted in significant improvements, offering order-of-magnitude gains in both measurement throughput and sensitivity. This has proven instrumental in overcoming the challenges associated with defect inspection and characterisation in wide bandgap semiconductors, thereby facilitating more efficient power electronics for electrification of transport, renewable energy, and next-generation communications.