National Physical Laboratory

Understanding threading dislocation contrast in scanning electron microscope images

The growth of ideal compound semiconductors can be challenging. Threading dislocations are inherent growth side effects of III-nitrides material systems and they can limit the optoelectronic performance of the resulting devices.

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Published: 17 November 2016

Authors: E Pascal

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Last Updated: 30 Nov 2016
Created: 17 Nov 2016

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