Development of measurement infrastructure
The use of Secondary Ion Mass Spectrometry (SIMS) is supported by a robust measurement infrastructure. Over the years NPL has developed metrology and provided guidance in these areas (1) Ion beam damage – a simple bond-breaking model was developed to describe the observed damage effects in organics [1]. (2) Electron beam damage – we showed a recommended upper limit of 6 x 1018 electrons/m2 [2]. (3) Ion detection efficiency – the detector efficiency drops off rapidly for large secondary ions and depends strongly on the ion composition. Increasing the ion energy to 20 keV improves efficiency considerably, as illustrated above. [3] (4) Instrument repeatability – excellent repeatability of 1% is now typically realised, an improvement by 1 to 2 orders of magnitude through a series of VAMAS studies [4]. (5) Instrument reproducibility– the NPL RISR method improves spectral equivalence between different spectrometers by up to a factor of 33 [5]. (6) Calibration of the mass scale – our research evaluated the reasons behind the poor mass scale calibration and recommendations were provided to improve this by a factor of 10 [6]. (7) Sample topography – this can severely restrict analyses and guidance was given to diagnose and reduce topographical artefacts [8]. (8) Detector linearity – SIMS signal linearity is limited by single ion counting statistics. Factors affect linearity and the use of Poissonian intensity correction in practical analyses is discussed.
Selected Publications
[1] Static SIMS: a study of damage using polymers, I S Gilmore and M P Seah, Surf. Interface Anal., 24, 746 (1996).
[2] Electron flood gun damage in the analysis of polymers and organics in time of flight SIMS, I S Gilmore and M P Seah, Appl. Surf. Sci., 187, 89 (2002).
[3] Ion detection efficiency in SIMS: energy, mass and composition dependencies for microchannel plates used in mass spectrometers, I S Gilmore and M P Seah, Int. J. Mass Spectrom., 202, 217 (2000)
[4] Static SIMS – VAMAS interlaboratory study for intensity repeatability, mass scale accuracy and relative quantification, F M Green, J L S Lee, I S Gilmore, S J Spencer and M P Seah, Surf. Interface Anal., SIA 42 (2010) 129
[5] Static ToF-SIMS – A VAMAS interlaboratory study – Part I – Repeatability and reproducibility of spectra, I S Gilmore, M P Seah and F M Green, Surf. Interface Anal., 37, 651 (2005).
[6] ToF-SIMS: accurate mass scale calibration, F M Green, I S Gilmore and M P Seah, J. Am. Soc. Mass Spectrom. 17, 514 (2006)
[7] Topography and field effects in the quantitative analysis of conductive surfaces using ToF-SIMS, J L S Lee, I S Gilmore, I W Fletcher, M P Seah, Appl. Surf. Sci. 255 (2008) 1560–1563
Reference Guide
Development of a Standards Base for Static SIMS – A Review
If you require PDF copies of the publications, please contact us below.
Contact: Ian Gilmore
