Small epitaxial graphene devices for room temperature magnetosensing applications
We study performance of Hall sensors with the width range from 0.5 to 20.0 µm fabricated out of a monolayer graphene epitaxially grown on SiC.
The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-µm graphene sensor is ≈ 2.5 µT/√Hz (Fig 1), making them comparable with state-of-the-art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene.
Relatively high resistance significantly restricts performance of the smallest 500-nm devices. We show that the carrier mobility is strongly size dependent (Fig 2), signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance.
We also detected the stray field of a 1-µm Dynal bead with the magnetic moment of ~4×108 μB by placing it on a 2-µm device using a nanomanipulator inside of a focused ion beam system (Fig 3).
Fig 3: Scanning electron micrograph showing 1-µm Dynal bead on cross 1 of the 2-µm graphene device. C1, C2 and C3 represent crosses 1, 2 and 3, respectively.
Using a phase sensitive AC-DC Hall magnetometry method, we reliably detected the bead with a relatively large response of the Hall voltage ~ 7 μV (Fig 4).
References
- Epitaxial Graphene Sensors for Detection of Small Magnetic Moments
V. Panchal, D. Cox, R. Yakimova, and O. Kazakova
IEEE Trans. Magn., Vol 49, No 1, pp 97–100 (2013). - Small Epitaxial Graphene Devices for Magnetosensing Applications
V. Panchal, K. Cedergren, R. Yakimova, A. Tzalenchuk, S. Kubatkin, and O. Kazakova
J. Appl. Phys., 111, 07E509 (2012).
