Scanning probe microscopy has been around for more than 20 years. Primarily used as a surface characterisation tool, there has been much research in the recent years to exploit its atomic precision capability for device fabrication as well.

In this talk, I shall present some recent work on using scanning probe microscopy - scanning tunnelling microscopy, in particular - for fabricating devices with atomically precise dopant placement. In combination with a novel device registration technique and controlled device encapsulation by molecular beam epitaxy, it was possible to fabricate and perform ex situ measurements on complete devices with macroscopic contacts connected to nano-patterned dopant regions. I shall present both fabrication and measurement results on such devices and highlight some key challenges and potential applications of this technique.

Kuan Eng Johnson Goh is currently a Research Engineer at the Institute of Materials Research and Engineering (Singapore) where he works on ballistic electron emission microscopy (BEEM) for the atomic-scale characterization of device interfaces in molecular electronics. He completed his PhD in Physics at the University of New South Wales in 2006 under an Endeavour International Postgraduate Research Scholarship awarded by the Australian government and three consecutive International Fellowships awarded by A*STAR (Singapore).

His thesis focused on the encapsulation of 2D dopant devices fabricated by scanning tunnelling microscopy and his areas of expertise include Si molecular beam epitaxy, delta-doped devices, low-dimensional quantum transport and scanning tunnelling microscopy. In 2008, he was awarded the best paper award at the Workshop for Young Scientists organized by the World Materials Research Institutes Forum, and a Honorary Mention by National Instruments for the BEEM software he developed. He has 30 journal and conference publications and 2 patents.