National Physical Laboratory

Formation of few layer graphene on SiC: a comparison between C- and Si-terminated faces

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Published: 10 June 2013

Authors: C.E. Giusca, S.J. Spencer, A.G.Shard, A.J. Pollard, R. Yakimova, O. Kazakova

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We explore the growth of graphene on the Si-terminated face of SiC in contrast with the C-terminated one and present a complementary comparison of growth morphology, chemical composition and electronic properties using a range of scanning probe microscopy and photoelectron spectroscopy techniques.

We explore the growth of graphene on the Si-terminated face of SiC in contrast with the C-terminated one and present a complementary comparison of growth morphology, chemical composition and electronic properties using a range of scanning probe microscopy and photoelectron spectroscopy techniques.
Last Updated: 25 Mar 2014
Created: 29 Apr 2013

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