The fast pace of growing computing power could be sustained for many years to come thanks to new research from NPL that is applying advanced techniques to magnetic semiconductors.

Moore's Law observed that the density of transistors on an integrated circuit doubles every two years. Components have shrunk over time to achieve this, but experts believed that when the characteristic transistor size reduces below ~ 20 nm, heating and quantum effects would become so severe that the present design of transistors would not be of practical use.

Scientists at NPL have been researching single crystalline manganese-doped Ge germanium nanowires that display ferromagnetism above 300 K, a superior performance with respect to the hole mobility of around 340 cm2/Vs and other industrially relevant parameters, demonstrating the potential of using these nanowires as building blocks for electronic devices.

The solution lies in changing not only the material but also the architecture of our transistors. NPL has worked mainly with magnetically doped germanium nanowires. The resulting transistors, which could revolutionise computing and electronic devices, could realistically be just 10 years away.

The work is a result of close collaboration between scientists in Ireland (UCC and Trinity College), USA (Intel Corporation and the University of California) and the UK (NPL).

For further information contact Olga Kazakova

Find out more about NPL's research on Nanophysics